Mfr Part #:

IPG20N06S2L-35

Mfr Name: Infineon

The Infineon IPG20N06S2L-35 is a dual N-channel logic-level enhancement mode MOSFET. It offers a 55V drain-source breakdown voltage and a continuous drain current of 20A.

✓ Total Stock: 16,402 pcs

$ Price Range: $2.40

IPG20N06S2L-35 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	13,009 pcs On Request	13009 pcs	On Request	1	On Request	On Request	16+	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	2,000 pcs On Request	2000 pcs	On Request	1	On Request	On Request	19+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,393 pcs On Request	1393 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPG20N06S2L-35 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Input Capacitance	790 pF
Mounting Type	Surface Mount
Power Dissipation	65 W
Reverse Recovery Time	40 ns

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IPG20N06S2L-35 Description

Short technical summary and product information.

The Infineon IPG20N06S2L-35 is an OptiMOS® Power-Transistor featuring dual N-channel logic-level enhancement mode operation. This AEC Q101 qualified component is designed for demanding applications, offering a drain-source breakdown voltage of 55V and a continuous drain current of 20A at 25°C case temperature with VGS=10V. Its low on-state resistance, with a maximum of 44 mΩ at VGS=4.5V and 10A, contributes to efficient power handling.

The device operates within a wide temperature range of -55°C to +175°C and has a maximum power dissipation of 65W at 25°C. The IPG20N06S2L-35 comes in a PG-TDSON-8 package, suitable for surface mount applications. It also boasts a 175°C operating temperature and is RoHS compliant, making it a green product.

Key electrical characteristics include a gate threshold voltage typically around 1.6V, input capacitance of up to 790pF, and output capacitance up to 230pF. Dynamic characteristics such as turn-on delay time are as low as 3ns, and fall time is 15ns, enabling fast switching performance. The integrated reverse diode provides essential protection.

This MOSFET is 100% avalanche tested and meets stringent automotive qualification standards (AEC Q101). Its robust design and performance metrics make it suitable for various power management tasks in automotive and industrial systems.

IPG20N06S2L-35 Quick Information

Product Type: MOSFET

Canonical Name: Infineon IPG20N06S2L-35 N-Channel Power MOSFET

Subcategory: N-Channel

IPG20N06S2L-35 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPG20N06S2L-35 Estimated Pricing

Qty	Low	High
1+	$2.40	$2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPG20N06S2L-35 Features

Dual N-channel logic level enhancement mode.
AEC Q101 qualified for automotive use.
55V drain-source breakdown voltage.
20A continuous drain current.
Low on-state resistance (max 44mW).

IPG20N06S2L-35 Applications

Automotive power management systems.
Industrial motor control circuits.
DC-DC converters and power supplies.
Switching power applications.

IPG20N06S2L-35 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage?

55V drain-source breakdown voltage.

What package is the IPG20N06S2L-35 available in?

PG-TDSON-8 surface mount package.

What is the operating temperature range?

-55°C to +175°C.

What is the gate threshold voltage?

1.2V to 2.0V (typical 1.6V).

What is the on-resistance at 10V gate drive?

Maximum 35mΩ at VGS=10V, ID=15A.

What is the continuous drain current rating?

20A at 25°C case temperature.

What is the switching performance?

Typical turn-on delay 3ns, rise time 5ns, turn-off delay 25ns, fall time 15ns.