| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Reverse Recovery Time |
The Infineon Technologies IPD50P04P4L-11 is an AEC-qualified P-channel, logic-level, enhancement-mode power MOSFET from the OptiMOS®-P2 family. It is specifically intended for reverse battery protection applications.
Key electrical characteristics include a drain-source breakdown voltage of -40V and a maximum drain-source on-state resistance of 10.6 mΩ at VGS=-10V and ID=-50A. The device operates over a wide temperature range from -55°C to +175°C.
Packaged in a PG-TO252-3-313 surface-mount package, this MOSFET offers a continuous drain current of -50A at 25°C case temperature. It is also 100% avalanche tested and RoHS compliant.
This component is suitable for applications requiring robust reverse polarity protection, such as automotive systems and power management circuits where high efficiency and reliability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -40 V.
The maximum operating temperature is 175 °C.
The package type is PG-TO252-3-313.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The typical drain-source on-state resistance is 10.6 mW.
The continuous drain current is -50 A.