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IPB60R099P7 The Infineon Technologies IPB60R099P7 is a 650V N-channel CoolMOS P7 Power MOSFET. It offers low switching and conduction losses in a surface mount PG-TO 263-3 package.
Mfr Part #:

IPB60R099P7

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies IPB60R099P7 is a 650V N-channel CoolMOS P7 Power MOSFET. It offers low switching and conduction losses in a surface mount PG-TO 263-3 package.
✓ Total Stock: 2,931 pcs
$ Price Range: $3.49

IPB60R099P7 Available from 1 distributor

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IPB60R099P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Gate Charge
Mounting Type
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IPB60R099P7 Description

Short technical summary and product information.

The Infineon Technologies IPB60R099P7 is a 600V CoolMOS P7 series N-channel power MOSFET. This 7th generation platform is designed using the superjunction principle, offering a revolutionary technology for high voltage power MOSFETs. It combines the benefits of a fast-switching SJ MOSFET with excellent ease of use, including very low ringing tendency and outstanding body diode robustness.

 

Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 99mΩ, a typical Gate Charge (Qg) of 45nC, and a pulsed Drain Current (Id,pulse) of 100A. The energy loss (Eoss) at 400V is 5.0 µJ, and the body diode exhibits a diF/dt rating of 900 A/µs.

 

This MOSFET is suitable for hard and soft switching applications such as PFC and LLC stages, due to its outstanding commutation ruggedness. It is fully qualified according to JEDEC for industrial applications. The component is housed in a PG-TO 263-3 package, designed for surface mounting.

 

Potential applications include PFC stages, hard-switching PWM stages, and resonant switching stages for products like PC Silverbox, Adapters, LCD & PDP TVs, Lighting, Servers, Telecom, and UPS.

IPB60R099P7 Quick Information

Product Type: Power MOSFET
Series: CoolMOS P7
Canonical Name: Infineon Technologies IPB60R099P7 CoolMOS P7 Power MOSFET
Subcategory: N-Channel Power MOSFET

IPB60R099P7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB60R099P7 Estimated Pricing

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1+ $3.49 $3.49

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB60R099P7 Features

  • 650V Drain-Source Voltage rating.
  • 99mΩ maximum On-Resistance.
  • 45nC typical Gate Charge.
  • 100A pulsed Drain Current capability.
  • PG-TO 263-3 surface mount package.

IPB60R099P7 Applications

  • Suitable for PFC stages.
  • Used in hard-switching PWM stages.
  • Applicable for resonant switching stages.
  • Designed for adapter applications.
  • Ideal for server power supplies.

IPB60R099P7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the IPB60R099P7?

The maximum Drain-Source Voltage (Vds) at Tj,max is 650V.

What is the maximum On-Resistance of the IPB60R099P7?

The maximum On-Resistance (Rds(on)) is 99mΩ.

What is the typical Gate Charge for this MOSFET?

The typical Gate Charge (Qg) is 45nC.

What is the pulsed Drain Current rating?

The pulsed Drain Current (Id,pulse) is 100A.

What type of package is the IPB60R099P7 in?

The IPB60R099P7 is in a PG-TO 263-3 package.

What is the RoHS status of the IPB60R099P7?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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