Mfr Part #:

IPB60R099P7

Mfr Name: Infineon

The Infineon IPB60R099P7 is a 600V CoolMOS P7 series N-channel power MOSFET. It offers low switching and conduction losses for increased efficiency.

✓ Total Stock: 23,935 pcs

IPB60R099P7 Available from 2 distributors

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	22,333 pcs On Request	22333 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,602 pcs On Request	1602 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPB60R099P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	45nC
Mounting Type	Surface Mount
Package / Case	PG-TO 263-3

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IPB60R099P7 Description

Short technical summary and product information.

The Infineon IPB60R099P7 is a 600V N-channel power MOSFET from the CoolMOS P7 generation. This technology is designed according to the superjunction principle, offering a revolutionary approach to high-voltage power MOSFETs.

Key electrical specifications include a maximum drain-source voltage of 650V and a maximum on-resistance of 99mΩ. It features a typical gate charge of 45nC and a pulsed drain current capability of 100A. The device also exhibits excellent ESD robustness, rated at over 2kV (HBM).

This MOSFET is suitable for hard and soft switching applications such as PFC and LLC stages, as well as PWM stages. Its design benefits include low ringing tendency, outstanding body diode robustness against hard commutation, and simplified thermal management due to low switching and conduction losses.

The IPB60R099P7 is supplied in a PG-TO 263-3 package, designed for surface mounting. It is fully qualified according to JEDEC for industrial applications.

IPB60R099P7 Quick Information

Product Type: MOSFET

Series: CoolMOS P7

Canonical Name: Infineon IPB60R099P7 N-channel Power MOSFET

Subcategory: N-Channel Power MOSFET

IPB60R099P7 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPB60R099P7 Features

650V drain-source voltage rating.
99mΩ maximum on-resistance.
Suitable for hard and soft switching.
Excellent ESD robustness >2kV.
Surface mount PG-TO 263-3 package.

IPB60R099P7 Applications

Used in PFC stages.
Suitable for LLC resonant stages.
Applied in PWM switching stages.
Found in server power supplies.
Used in telecom applications.

IPB60R099P7 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the IPB60R099P7?

The maximum drain-source voltage (VDS) at Tj,max is 650V.

What is the maximum on-resistance of the IPB60R099P7 MOSFET?

The maximum on-resistance (RDS(on)) is 99mΩ.

What is the typical gate charge for this MOSFET?

The typical gate charge (Qg) is 45nC.

What package type is the IPB60R099P7 supplied in?

The IPB60R099P7 is supplied in a PG-TO 263-3 package.

What are the potential applications for the IPB60R099P7?

Potential applications include PFC stages, hard switching PWM stages, and resonant switching stages for devices like PC Silverbox, adapters, TVs, lighting, servers, and telecom equipment.