| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19,166 pcs
|
19166 pcs | On Request | 1 | On Request | On Request | 1251+ | On Request | On Request | |
|
2,200 pcs
|
2200 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Input Capacitance | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| SVHC Present | |
| Tape & Reel |
The Infineon Technologies BSC076N06NS3 G is a high-performance N-Channel MOSFET. It is designed for applications requiring efficient power switching and low conduction losses.
Key electrical characteristics include a maximum drain-source voltage of 60V and a continuous drain current of 76A at 25°C. The device exhibits a low maximum on-resistance of 7.6mOhm at VGS = 10V and ID = 38A, and a typical on-resistance of 5.5mOhm under similar conditions. The gate threshold voltage is typically 2.5V.
This MOSFET is housed in a PG-TDSON-8 surface-mount package, suitable for automated assembly processes. It operates within a temperature range of -55°C to 150°C. The component is designed for robust performance in various power management scenarios.
With its combination of high current capability, low on-resistance, and surface-mount packaging, the BSC076N06NS3 G is well-suited for use in power supplies, motor control, and other demanding electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The continuous drain current is 76A at TC = 25°C.
The maximum on-resistance is 7.6mOhm at VGS = 10V and ID = 38A.
The operating junction temperature range is -55°C to 150°C.
It is available in a PG-TDSON-8 surface mount package.
The typical gate charge is 45nC at VGS = 10V.
The typical input capacitance is 1500pF at VDS = 25V, VGS = 0V, f = 1MHz.