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7,698 pcs
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7698 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The Vishay Dale SUM18N25-165 is a high-performance N-Channel MOSFET belonging to the TrenchFET® series. It is designed for demanding power applications, offering a robust 250V drain-source breakdown voltage and a continuous drain current capability of 18A at case temperature.
Key electrical characteristics include a maximum on-resistance of 165 mOhm at 14A and 10V gate drive, and a gate threshold voltage of 4V. The MOSFET operates with a gate-source voltage range of ±20V and requires a drive voltage of 10V for optimal performance. Its input capacitance is rated at 1950pF at 25V, and the gate charge is 45nC at 10V.
Packaged in a surface-mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, the SUM18N25-165 is suitable for automated assembly processes. It has a maximum power dissipation of 3.75W at ambient temperature and 150W at case temperature. The operating temperature range is from -55°C to 175°C (TJ), making it suitable for a wide array of environmental conditions.
The drain-source breakdown voltage (Vds) is 250V.
The maximum continuous drain current (Id) is 18A at case temperature.
The maximum on-resistance (Rds(on)) is 165 mOhm at 14A drain current and 10V gate-source voltage.
The operating junction temperature range is -55°C to 175°C.
The SUM18N25-165 is available in a TO-263-3 (D²Pak) surface-mount package.
The maximum gate threshold voltage (Vgs(th)) is 4V at 250µA drain current.
The maximum power dissipation is 3.75W at ambient temperature and 150W at case temperature.