| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,890 pcs
|
2890 pcs | On Request | 1 | On Request | On Request | 1550+ | On Request | On Request | |
|
1,515 pcs
|
1515 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
750 pcs
|
750 pcs | On Request | 1 | On Request | On Request | 18+22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free |
The IPL65R099C7 is a 700V N-Channel MOSFET from Infineon Technologies, designed for high-efficiency power conversion. It features a maximum on-resistance of 99mOhm and a typical gate charge of 45nC, enabling low switching losses. The device can handle pulsed drain currents up to 100A and has an output capacitance energy of 5.5µJ at 400V. The body diode offers a high diF/dt capability of 60A/µs. The MOSFET is housed in a PG-VSON-4 surface-mount package, suitable for compact designs. Typical applications include power supplies, adapters, and lighting.
The maximum drain-source voltage is 700V.
The package is PG-VSON-4, surface mount.
The maximum on-resistance is 99mOhm.
The typical gate charge is 45nC.
The pulsed drain current rating is 100A.
The output capacitance energy at 400V is 5.5µJ.
The body diode diF/dt is 60A/µs.
