IPA60R280P7
Infineon
The Infineon IPA60R280P7 is a 650V N-channel CoolMOS P7 series power MOSFET. It offers low conduction and switching losses, making it suitable for various power applications.
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778 pcs
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778 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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The Infineon IPA80R600P7 is a high-performance N-channel power MOSFET from the 800V CoolMOS P7 series. This device sets a new benchmark in 800V super junction technologies, combining best-in-class performance with ease of use.
Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 800V and a maximum On-Resistance (Rds(on)) of 0.60Ω. It features a typical Gate Charge (Qg) of 20nC and a typical Gate-Source Threshold Voltage (Vgs(th)) of 3V. The energy loss (Eoss) at 500V is 2.0µJ, and the continuous drain current (Id) is 8A.
This MOSFET is designed for hard and soft switching flyback topologies. Potential applications include LED lighting, low power chargers and adapters, audio, AUX power, and industrial power supplies. It is also suitable for PFC stages in consumer applications and solar inverters.
The IPA80R600P7 comes in a PG-TO 220 FullPAK package, suitable for various mounting configurations. It is fully qualified according to JEDEC for industrial applications, ensuring reliability and performance in demanding environments.
The maximum Drain-Source Voltage (Vds) at Tj=25°C is 800V.
The maximum On-Resistance (Rds(on)) is 0.60Ω.
The typical Gate Charge (Qg) is 20nC.
The IPA80R600P7 is supplied in a PG-TO 220 FullPAK package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.
