| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The Infineon IPA60R280P7 is a 600V CoolMOS P7 series power MOSFET designed for high-voltage applications. This N-channel device utilizes superjunction technology to combine the benefits of fast switching with excellent ease of use, including low ringing tendency and outstanding body diode robustness.
Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 280mΩ, and a typical Gate Charge (Qg) of 18nC. It also features a pulsed drain current (Id,pulse) of 36A and an energy loss (Eoss) of 2.1µJ at 400V.
The IPA60R280P7 is suitable for hard and soft switching applications such as PFC and LLC stages, and is designed for use in PC Silverbox, adapters, LCD/PDP TVs, lighting, servers, telecom, and UPS systems. It is packaged in a PG-TO 220 FullPAK.
This MOSFET is fully qualified according to JEDEC for Industrial Applications and offers excellent ESD robustness greater than 2kV (HBM).
The maximum Drain-Source Voltage (Vds) at Tj,max is 650V.
The maximum On-Resistance (Rds(on)) is 280mΩ.
The typical Gate Charge (Qg) is 18nC.
The IPA60R280P7 is supplied in a PG-TO 220 FullPAK package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1.
The REACH status is REACH Unaffected.