Mfr Part #:

IPA60R060P7

Mfr Name: Infineon

The Infineon IPA60R060P7 is a 600V N-channel CoolMOS P7 series power MOSFET. It offers low switching and conduction losses, making it efficient for various power applications.

✓ Total Stock: 4,759 pcs

IPA60R060P7 Available from 2 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
PROSOFT ELECTRONICS ✓ Non-Authorised Inventory information	3,500 pcs On Request	3500 pcs	On Request	1	On Request	On Request	17+20+22+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,259 pcs On Request	1259 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPA60R060P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	67nC
Mounting Type	Through Hole
Package / Case	PG-TO 220 FullPAK

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IPA60R060P7 Description

Short technical summary and product information.

The Infineon IPA60R060P7 is a 600V N-channel power MOSFET from the CoolMOS P7 series, built on Infineon's superjunction technology. This device is designed for high voltage applications and offers significant reductions in switching and conduction losses, leading to more efficient, compact, and cooler power systems.

Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 60mΩ, and a typical Gate Charge (Qg) of 67nC. It also features a pulsed drain current (Id,pulse) of 151A and an energy loss (Eoss) of 7.1µJ at 400V.

The IPA60R060P7 is suitable for both hard and soft switching applications, including PFC and LLC stages. Its benefits include ease of use due to low ringing tendency and outstanding body diode robustness against hard commutation. The device exhibits excellent ESD robustness greater than 2kV (HBM).

Packaged in a PG-TO 220 FullPAK, this MOSFET is designed for through-hole mounting. Its performance characteristics make it ideal for applications such as PC Silverbox, adapters, LCD & PDP TVs, lighting, servers, telecom, and UPS systems.

IPA60R060P7 Quick Information

Product Type: MOSFET

Series: CoolMOS P7

Canonical Name: Infineon IPA60R060P7 N-channel Power MOSFET

Subcategory: Power MOSFET

IPA60R060P7 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPA60R060P7 Features

650V maximum Drain-Source Voltage.
60mΩ maximum On-Resistance.
67nC typical Gate Charge.
151A pulsed Drain Current.
PG-TO 220 FullPAK package.

IPA60R060P7 Applications

Suitable for PFC and LLC stages.
Used in power adapters and lighting.
Ideal for server and telecom power.
Applicable in PC Silverbox designs.
Supports UPS power systems.

IPA60R060P7 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the IPA60R060P7?

The maximum drain-source voltage is 650V.

What is the maximum on-resistance?

The maximum on-resistance is 60mOhm.

What is the typical gate charge?

The typical gate charge is 67nC.

What is the pulsed drain current rating?

The pulsed drain current rating is 151A.

What is the body diode dI/dt capability?

The body diode can handle 900A/µs dI/dt.

What is the output capacitance energy loss at 400V?

The output capacitance energy loss is 7.1µJ at 400V.

What package does the IPA60R060P7 come in?

It comes in a PG-TO 220 FullPAK through-hole package.