| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
136 pcs
|
136 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Conflict Minerals | |
| Gate Charge | |
| Halogen Free | |
| Industrial Grade | |
| Lead Style | |
| Mounting Type | |
| Package / Case | |
| SVHC Present | |
| Storage Temperature |
The Infineon IPA95R1K2P7 is a high-performance N-channel power MOSFET from the 950V CoolMOS P7 series. This device sets a new benchmark in super junction technologies, combining best-in-class performance with ease of use.
Key electrical specifications include a maximum drain-source voltage of 950V, a maximum on-resistance of 1.2Ω, and a typical gate charge of 15nC. The typical gate-source threshold voltage is 3V, with a small variation of ±0.5V. It also features an integrated Zener diode for ESD protection.
This MOSFET is recommended for flyback topologies in applications such as LED lighting, low-power chargers and adapters, smart meters, and auxiliary power supplies. It is also suitable for PFC stages in consumer and solar applications. The device is fully qualified according to JEDEC for industrial applications.
The IPA95R1K2P7 is supplied in a PG-TO 220 FullPAK package, suitable for through-hole mounting.
950V maximum.
1.2Ω maximum.
6A.
15nC.
1.3µJ.
Class 2 (HBM).
PG-TO 220 FullPAK, through-hole mounting.