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IPA70R360P7S The Infineon IPA70R360P7S is a 700V N-channel CoolMOS P7 power MOSFET. It offers a low on-resistance of 0.36Ω and is supplied in a TO-220 FullPAK package.
Mfr Part #:

IPA70R360P7S

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPA70R360P7S is a 700V N-channel CoolMOS P7 power MOSFET. It offers a low on-resistance of 0.36Ω and is supplied in a TO-220 FullPAK package.
✓ Total Stock: 4,467 pcs

IPA70R360P7S Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
3,667 pcs
On Request
3667 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
800 pcs
On Request
800 pcs On Request 1 On Request On Request 23+ On Request On Request
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IPA70R360P7S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Gate Charge
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SVHC Present
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IPA70R360P7S Description

Short technical summary and product information.

The Infineon IPA70R360P7S is a high-voltage N-channel power MOSFET from the CoolMOS P7 series. Designed using the superjunction principle, this device is tailored for cost-sensitive applications requiring high efficiency and power density.

 

Key electrical specifications include a maximum Drain-Source Voltage (VDS) of 700V and a maximum On-Resistance (RDS(on)) of 0.36Ω. The typical Gate Charge (Qg) is 16.4nC, and the output capacitance (Eoss) at 400V is 1.8µJ. It also features an integrated ESD protection diode with an ESD class of 2 (HBM).

 

This MOSFET is suitable for applications such as chargers, adapters, and lighting. It is packaged in a PG-TO 220 FullPAK, facilitating efficient thermal management and integration into slim designs. The product is validated according to JEDEC standards, ensuring reliability for demanding applications.

IPA70R360P7S Quick Information

Product Type: MOSFET
Series: CoolMOS P7
Canonical Name: Infineon IPA70R360P7S N-channel Power MOSFET
Subcategory: Power MOSFET

IPA70R360P7S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPA70R360P7S Features

  • 700V Drain-Source Voltage rating.
  • 0.36Ω maximum On-Resistance.
  • 16.4nC typical Gate Charge.
  • Integrated ESD protection diode.
  • TO-220 FullPAK package.

IPA70R360P7S Applications

  • Suitable for charger applications.
  • Ideal for adapter designs.
  • Used in lighting applications.
  • Supports Flyback topologies.

IPA70R360P7S FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPA70R360P7S?

The maximum drain-source voltage is 700V at Tj=25°C.

What package is the IPA70R360P7S available in?

The IPA70R360P7S is housed in a PG-TO 220 FullPAK package.

What is the typical gate charge of the IPA70R360P7S?

The typical gate charge is 16.4nC.

What is the maximum on-resistance of the IPA70R360P7S?

The maximum on-resistance is 0.36Ω.

What is the ESD classification of the IPA70R360P7S?

The ESD classification is Class 2 (HBM).

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