SI3422DV-T1-E3
Vishay
The SI3422DV-T1-E3 is a single N-channel MOSFET from Vishay Siliconix. It features Trench Technology with a 200V VDS rating and a 4A ID.
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1,163 pcs
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1163 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The F2907ZS is a high-performance N-Channel MOSFET designed for demanding applications. It features a drain-source voltage (V_DS) of up to 80V and supports gate-source voltages (V_GS) of ±20V. With a threshold voltage (V_th) of 3V, it ensures effective turn-on at appropriate gate voltages.
Utilizing Trench technology, the F2907ZS boasts an extremely low on-resistance (R_DS(ON)) of 3.1mΩ at a gate voltage of 10V. This, combined with its maximum drain current (I_D) of 230A, provides excellent switching performance and high current handling capability.
This MOSFET is ideal for applications requiring high power and high efficiency, such as high-power switch applications (DC-DC converters, power switch systems), motor drive systems, load switch modules, and power converters (inverters, power regulators). Its robust design ensures efficient current control, reduced power loss, and improved system efficiency.
The component is housed in a TO263 package, suitable for surface mount applications.
| Qty | Low | High |
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| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the F2907ZS MOSFET is 80V.
The maximum drain current for the F2907ZS MOSFET is 230A.
The on-resistance of the F2907ZS MOSFET is 3.1mΩ at a gate voltage of 10V.
The F2907ZS MOSFET uses Trench technology.
The F2907ZS MOSFET is supplied in a TO263 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.