| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ST BUW11A is a silicon NPN power transistor housed in a TO-3PN package. It is engineered for high voltage and high speed applications, making it suitable for use in converters, inverters, switching regulators, and motor control systems.
Key electrical specifications include a maximum collector-emitter voltage of 1000V (open emitter) and a continuous collector current of 5A, with a peak collector current of 10A. The transistor offers a maximum power dissipation of 100W at 25°C case temperature and a junction temperature up to 150°C. Its thermal resistance from junction to mounting base is 1.25 K/W.
Performance characteristics include a collector-emitter saturation voltage of 1.5V at 2.5A and 0.5A base current, and a base-emitter saturation voltage of 1.4V under the same conditions. DC current gain (hFE) ranges from 10 to 35 depending on the operating current. Switching times are also specified, with a turn-on time of 1.0μs, storage time of 4.0μs, and fall time of 0.8μs.
The TO-3PN package is designed for through-hole mounting, facilitating integration into various electronic circuits. This transistor is a reliable component for demanding power applications requiring high voltage handling and fast switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BUW11A is 450V when the base is open.
The BUW11A can handle a maximum continuous collector current (IC) of 5A and a peak collector current (ICM) of 10A.
The BUW11A has a maximum total power dissipation (PT) of 100W at a case temperature of 25°C.
The maximum junction temperature (Tj) for the BUW11A is 150°C.
The BUW11A is supplied in a TO-3PN package.
