Mfr Part #:

MDF11N65BTH

The MAGNACHIP SEMICONDUCTOR MDF11N65BTH is a 650V N-channel MOSFET. It offers a continuous drain current of 12A and a maximum on-resistance of 0.65Ω.

✓ Total Stock: 641 pcs

$ Price Range: $1.67

MDF11N65BTH Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	392 pcs On Request	392 pcs	On Request	1	On Request	On Request	11+	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	249 pcs On Request	249 pcs	On Request	1	On Request	On Request	14+	On Request	On Request

MDF11N65BTH Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	Magnachip Semiconductor
Halogen Free	Halogen Free
Junction Temperature	150°C
Mounting Type	Through Hole
Package / Case	TO-220F
Storage Temperature	150°C

View Similar Products (0)

MDF11N65BTH Description

Short technical summary and product information.

The MDF11N65BTH from Magnachip Semiconductor is an N-channel MOSFET designed with advanced technology for low on-state resistance and high switching performance. It features a drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 12A at 25°C. The maximum on-resistance (Rds(on)) is specified at 0.65Ω at a gate-source voltage (Vgs) of 10V.

This MOSFET is suitable for applications such as Switched-Mode Power Supplies (SMPS), high-speed switching, and general-purpose power applications. It is housed in a TO-220F package, suitable for through-hole mounting.

Key electrical characteristics include a gate threshold voltage (Vgs(th)) between 2.0V and 4.0V, and a maximum power dissipation of 49.6W at 25°C. The device also includes a body diode with a forward voltage (Vsd) of 1.4V and a reverse recovery time (trr) of 355ns.

With its robust specifications, the MDF11N65BTH is engineered for reliable performance in demanding power electronic circuits.

MDF11N65BTH Quick Information

Product Type: MOSFET

Series: MDF

Canonical Name: MDF11N65BTH N-channel MOSFET

Subcategory: N-Channel

MDF11N65BTH Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

MDF11N65BTH Estimated Pricing

Qty	Low	High
1+	$1.67	$1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

MDF11N65BTH Features

650V drain-source voltage rating.
12A continuous drain current.
0.65Ω maximum on-resistance.
TO-220F package for through-hole mounting.
Suitable for SMPS applications.

MDF11N65BTH Applications

Ideal for Switched-Mode Power Supplies.
Used in high-speed switching circuits.
General purpose power applications.
Power factor correction circuits.

MDF11N65BTH FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the MDF11N65BTH?

The maximum drain-source voltage (Vds) for the MDF11N65BTH is 650V.

What is the continuous drain current of the MDF11N65BTH at 25°C?

The continuous drain current (Id) at 25°C for the MDF11N65BTH is 12A.

What is the maximum on-resistance (Rds(on)) for the MDF11N65BTH?

The maximum on-resistance (Rds(on)) for the MDF11N65BTH is 0.65Ω at a gate-source voltage of 10V.

What package type is the MDF11N65BTH supplied in?

The MDF11N65BTH is supplied in a TO-220F package.

What is the typical total gate charge (Qg) for the MDF11N65BTH?

The typical total gate charge (Qg) for the MDF11N65BTH is 31nC.

What is the operating temperature range for the MDF11N65BTH?

The junction and storage temperature range for the MDF11N65BTH is -55°C to 150°C.