| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,016 pcs
|
2016 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
|
1,890 pcs
|
1890 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Power Dissipation | |
| Storage Temperature | |
| Tape & Reel | |
| Turn On Time |
The 2SC3320 from Fujitsu Semiconductor is an NPN epitaxial silicon power transistor housed in a TO-3PN package. It is engineered for high voltage and high-speed switching applications, offering high reliability.
Key electrical specifications include a collector-emitter voltage of 400V and a maximum collector current of 15A. The device can handle a maximum power dissipation of 80W at 25°C case temperature. Its saturation voltage is low, with VCEsat at 1.0V and VBEsat at 1.5V under specific test conditions.
This transistor is suitable for various applications such as switching regulators, ultrasonic generators, high-frequency inverters, and general-purpose power amplifiers. Its thermal resistance from junction to case is 1.56°C/W, contributing to its thermal performance.
The TO-3PN package is designed for through-hole mounting. The transistor exhibits fast switching times, with a typical turn-on time of 0.5µs, storage time of 1.5µs, and fall time of 0.15µs under specified load conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SC3320 is 400V.
The maximum continuous collector current (IC) is 15A.
The power dissipation (PC) is rated at 80W at a case temperature of 25°C.
The maximum junction temperature (Tj) is 150°C.
The 2SC3320 is available in the TO-3PN package.