Mfr Part #:

IR2111STRPBF

Mfr Name: Vishay

The IR2111STRPBF is a high voltage, high speed power MOSFET and IGBT driver designed for half-bridge applications. It operates up to 600V with a gate drive supply range of 10 to 20V.

✓ Total Stock: 1,972 pcs

$ Price Range: $2.01

IR2111STRPBF Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Speed Components Ltd ✓ Non-Authorised Inventory information	1,350 pcs On Request	1350 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	334 pcs On Request	334 pcs	On Request	1	On Request	On Request	07+	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	288 pcs On Request	288 pcs	On Request	1	On Request	On Request	07+	On Request	On Request

IR2111STRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Vishay
Junction Temperature	150°C
Lead Spacing	1.27 mm
Lead Style	Gull-Wing
Mounting Type	Through Hole
Storage Temperature	150°C
Tape & Reel	Yes

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IR2111STRPBF Description

Short technical summary and product information.

The IR2111STRPBF is a high voltage, high speed power MOSFET and IGBT driver from Infineon Technologies, engineered for half-bridge applications. It features a floating channel capable of operating up to 600V, making it suitable for demanding power switching designs.

Key electrical characteristics include a gate drive supply range of 10 to 20V, with a typical turn-on delay of 750ns and turn-off delay of 150ns. The device also incorporates internally set deadtime of 650ns to prevent shoot-through in the output half-bridge.

Available in 8-lead PDIP and 8-lead SOIC packages, the IR2111STRPBF is designed for through-hole mounting. Its robust construction and features like undervoltage lockout and dV/dt immunity contribute to reliable operation in various power electronics systems.

This driver is compatible with standard CMOS logic inputs and provides matched propagation delays for both channels, simplifying design integration. The high-side output is in phase with the input signal.

IR2111STRPBF Quick Information

Product Type: Gate Driver

Canonical Name: IR2111STRPBF Half-Bridge Driver

IR2111STRPBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

IR2111STRPBF Estimated Pricing

Qty	Low	High
1+	$2.01	$2.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

IR2111STRPBF Features

Operates up to 600V offset voltage.
Gate drive supply range is 10 to 20V.
Internally set deadtime prevents shoot-through.
Matched propagation delay for both channels.
Available in PDIP and SOIC packages.

IR2111STRPBF Applications

Suitable for half-bridge applications.
Drives N-channel power MOSFETs.
Drives N-channel IGBTs.
High speed power switching.

IR2111STRPBF FAQs

5 frequently asked questions generated from this part’s specifications.

What is the operating voltage range of the IR2111STRPBF?

The gate drive supply range is 10V to 20V.

What packages is the IR2111 available in?

Available in 8-Lead PDIP (through-hole) and 8-Lead SOIC (surface mount).

What is the maximum offset voltage of the IR2111?

The offset voltage is rated up to 600V.

What are the output current capabilities?

Typical source current is 200mA and sink current is 420mA.

What is the typical deadtime?

Deadtime is typically 650ns.