AOT3N100 The AOS AOT3N100 is a 1000V, 2.8A N-Channel MOSFET designed for AC-DC applications. It offers low RDS(on) and guaranteed avalanche capability.
Mfr Part #:

AOT3N100

Available from 1 distributors
Mfr Name: AOS
AOS
The AOS AOT3N100 is a 1000V, 2.8A N-Channel MOSFET designed for AC-DC applications. It offers low RDS(on) and guaranteed avalanche capability.
✓ Total Stock: 3,000 pcs
$ Price Range: $2.40

AOT3N100 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 1510+ On Request On Request

AOT3N100 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Junction Temperature
Mounting Type
Power Dissipation
Storage Temperature

AOT3N100 Description

Short technical summary and product information.

The AOT3N100 from AOS is an N-Channel MOSFET with a drain-source voltage rating of 1000V and a continuous drain current of 2.8A at 25°C. This device is fabricated using an advanced high voltage MOSFET process, delivering robust performance for popular AC-DC applications.

 

Key electrical characteristics include a low on-resistance (RDS(ON)) of typically 4.8W at VGS=10V, a gate threshold voltage ranging from 3.3V to 4.5V, and a maximum continuous drain current of 1.8A at 100°C. The MOSFET also features guaranteed avalanche capability, input capacitance (Ciss) up to 830pF, and output capacitance (Coss) up to 60pF.

 

Packaged in a TO-220 through-hole configuration, the AOT3N100 has a maximum junction temperature of 150°C and a maximum power dissipation of 132W at 25°C. Its thermal resistance from junction-to-case is 0.5°C/W.

 

This MOSFET is suitable for various applications requiring high voltage switching, including offline power supplies. The part is also available in a Halogen-Free version by adding an 'L' suffix to the part number.

AOT3N100 Quick Information

Product Type: MOSFET
Canonical Name: AOT3N100 N-Channel MOSFET
Subcategory: N-Channel

AOT3N100 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

AOT3N100 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

AOT3N100 Features

  • 1000V drain-source breakdown voltage.
  • 2.8A continuous drain current.
  • Low RDS(ON) of 4.8W typical.
  • Guaranteed avalanche capability.
  • TO-220 through-hole package.

AOT3N100 Applications

  • Suitable for AC-DC power supplies.
  • Used in offline power supply designs.
  • High voltage switching applications.
  • Robust performance in power systems.

AOT3N100 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the AOT3N100?

The minimum drain-source breakdown voltage is 1000V at 25°C, and 1100V at 150°C.

What package does the AOT3N100 come in?

The AOT3N100 is available in a TO-220 package.

What is the operating junction temperature range?

The junction temperature range is -55°C to 150°C.

What is the continuous drain current rating?

The continuous drain current is 2.8A at 25°C and 1.8A at 100°C case temperature.

What is the on-resistance?

The typical on-resistance is 4.8Ω, maximum 6Ω at VGS=10V.

Is the AOT3N100 avalanche rated?

Yes, it has a single pulse avalanche energy rating of 145mJ.

What is the gate threshold voltage?

The gate threshold voltage ranges from 3.3V minimum to 4.5V maximum, with typical 4V.

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