| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 1510+ | On Request | On Request |
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The AOT3N100 from AOS is an N-Channel MOSFET with a drain-source voltage rating of 1000V and a continuous drain current of 2.8A at 25°C. This device is fabricated using an advanced high voltage MOSFET process, delivering robust performance for popular AC-DC applications.
Key electrical characteristics include a low on-resistance (RDS(ON)) of typically 4.8W at VGS=10V, a gate threshold voltage ranging from 3.3V to 4.5V, and a maximum continuous drain current of 1.8A at 100°C. The MOSFET also features guaranteed avalanche capability, input capacitance (Ciss) up to 830pF, and output capacitance (Coss) up to 60pF.
Packaged in a TO-220 through-hole configuration, the AOT3N100 has a maximum junction temperature of 150°C and a maximum power dissipation of 132W at 25°C. Its thermal resistance from junction-to-case is 0.5°C/W.
This MOSFET is suitable for various applications requiring high voltage switching, including offline power supplies. The part is also available in a Halogen-Free version by adding an 'L' suffix to the part number.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 1000V at 25°C, and 1100V at 150°C.
The AOT3N100 is available in a TO-220 package.
The junction temperature range is -55°C to 150°C.
The continuous drain current is 2.8A at 25°C and 1.8A at 100°C case temperature.
The typical on-resistance is 4.8Ω, maximum 6Ω at VGS=10V.
Yes, it has a single pulse avalanche energy rating of 145mJ.
The gate threshold voltage ranges from 3.3V minimum to 4.5V maximum, with typical 4V.