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18 pcs
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18 pcs | On Request | 10 | On Request | On Request | On Request | On Request | On Request |
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The BUK456-800A from Philips is an N-channel enhancement mode field-effect power transistor. It is housed in a plastic TO-220AB envelope and is suitable for various switching applications including Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC, and AC/DC converters.
Key electrical specifications include a maximum drain-source voltage of 800V and a continuous DC drain current of up to 4A at 25°C, with a pulse peak current rating of 16A. The device offers a maximum power dissipation of 125W at 25°C and a typical drain-source on-state resistance of 3Ω.
Thermal characteristics are important for this device, with a junction to mounting base thermal resistance of 1.0 K/W and a junction to ambient thermal resistance of 60 K/W. The operating junction temperature can reach up to 150°C, with a storage temperature range of -55°C to 150°C.
This transistor is intended for general-purpose switching applications. Its robust design and high voltage capability make it a reliable component for power electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 800V.
The continuous DC drain current at 25°C is 4A.
The maximum power dissipation is 125W.
The BUK456-800A is supplied in a TO-220AB package.
The junction to mounting base thermal resistance is 1.0 K/W.
