| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11 pcs
|
11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Power Dissipation |
The BU208D from STMicroelectronics is an NPN Silicon Power Transistor manufactured using Multiepitaxial Mesa technology. This design incorporates a Hollow Emitter structure to enhance switching speeds, making it suitable for cost-effective, high-performance applications.
Key electrical specifications include a maximum collector current of 8A and a collector emitter voltage rating of 700V. The device has a collector emitter saturation voltage of 1V. Power dissipation is rated at 150W, with a maximum power dissipation of 60W.
The operating temperature range extends up to a maximum of 175°C, indicating robustness for demanding environments. The BU208D is designed for applications requiring reliable power switching and high voltage handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.26 | $1.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the BU208D is 8A.
The collector emitter voltage rating of the BU208D is 700V.
The BU208D transistor has a maximum power dissipation of 60W and a general power dissipation of 150W.
The maximum operating temperature for the BU208D is 175°C.
