| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
57,000 pcs
|
57000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
600 pcs
|
600 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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The IRF540NPBF from Infineon is a high-performance N-channel MOSFET. It is designed for various power switching applications, offering a maximum drain-source voltage of 100V and a continuous drain current of up to 33A at 25°C.
This MOSFET features a low on-state resistance (RDS(on)) of typically 0.07 Ohm at a gate-source voltage of 10V and a drain current of 16A, contributing to efficient power transfer and reduced heat generation. The typical gate threshold voltage is 2V, and the typical gate charge is 57nC under specified conditions.
Packaged in a TO-220-3 through-hole configuration, the IRF540NPBF is suitable for applications requiring robust power handling. It has a maximum continuous junction operating temperature of 150°C and can dissipate up to 150W of power at 25°C case temperature.
Key electrical characteristics include a maximum pulsed drain current of 132A. The component is designed for reliable operation in demanding power electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the IRF540NPBF is 100V.
The IRF540NPBF has a continuous drain current (ID) rating of 33A at 25°C.
The typical on-state resistance (RDS(on)) for the IRF540NPBF is 0.07 Ohm when VGS is 10V and ID is 16A.
The IRF540NPBF is supplied in a TO-220-3 package suitable for through-hole mounting.
The maximum junction operating temperature (TJ) for the IRF540NPBF is 150°C.