BSC076N06NS3 G
Infineon Technologies
The Infineon Technologies BSC076N06NS3 G is an N-Channel MOSFET designed for power applications. It offers a 60V drain-source voltage and a low on-resistance.
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17,354 pcs
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17354 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
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2,509 pcs
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2509 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The AOD458 from Alpha and Omega Semiconductor is an N-Channel MOSFET featuring a 250V drain-source voltage and a continuous drain current of 14A at 25°C. This device is fabricated using an advanced high voltage MOSFET process, delivering robust performance for popular AC-DC applications.
Key electrical characteristics include a low on-resistance (RDS(ON)) of less than 0.28W at VGS=10V and a gate threshold voltage typically around 3.8V. The MOSFET also provides guaranteed avalanche capability, making it suitable for demanding power supply designs.
Packaged in a TO-252 surface mount package, the AOD458 is ideal for applications such as boost converters and synchronous rectifiers. Its design is optimized for consumer, telecom, and industrial power supplies, as well as LED backlighting solutions.
| Qty | Low | High |
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| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the AOD458 is 250V.
The continuous drain current (ID) for the AOD458 at 25°C is 14A.
The typical gate threshold voltage (VGS(th)) for the AOD458 is 3.8V.
The maximum on-resistance (RDS(ON)) for the AOD458 at VGS=10V is 0.28W.
The AOD458 is available in a TO-252 package.
The RoHS status of the AOD458 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the AOD458 is 1.