IRF640NPBF The Infineon IRF640NPBF is an N-channel Power MOSFET with a 200V drain-to-source breakdown voltage and a continuous drain current of 18A at 25°C. It offers advanced process technology for efficient performance.
Mfr Part #:

IRF640NPBF

Available from 5 distributors
Mfr Name: Infineon
Infineon
The Infineon IRF640NPBF is an N-channel Power MOSFET with a 200V drain-to-source breakdown voltage and a continuous drain current of 18A at 25°C. It offers advanced process technology for efficient performance.
✓ Total Stock: 104,610 pcs
$ Price Range: $2.27

IRF640NPBF Available from 5 distributors

✓ Authorised
✓ Non-Authorised

IRF640NPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IRF640NPBF Description

Short technical summary and product information.

The Infineon IRF640NPBF is a Fifth Generation HEXFET Power MOSFET designed for high efficiency and reliability. It features a 200V drain-to-source breakdown voltage (VDSS) and a continuous drain current (ID) of 18A at 25°C, reducing to 13A at 100°C.

 

This MOSFET boasts a low on-resistance of 0.15 Ohms and a power dissipation capability of 150W at 25°C. It is designed with advanced processing techniques for extremely low on-resistance per silicon area, fast switching speeds, and ruggedized device design.

 

The IRF640NPBF is available in multiple package types including TO-220AB, D2Pak, and TO-262, catering to various application needs. The TO-220 package is suitable for commercial-industrial applications up to 50 watts, while the D2Pak offers high power capability for surface mount applications.

 

Key electrical characteristics include a gate-to-source voltage range of ±20V, single pulse avalanche energy of 247 mJ, and a peak diode recovery dv/dt of 8.1 V/ns. The operating and storage temperature range is -55°C to +175°C.

IRF640NPBF Quick Information

Product Type: MOSFET
Series: Fifth Generation HEXFET
Canonical Name: IRF640NPBF N-channel Power MOSFET
Subcategory: N-Channel

IRF640NPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF640NPBF Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF640NPBF Features

  • 200V drain-to-source breakdown voltage.
  • 18A continuous drain current at 25°C.
  • 150W maximum power dissipation.
  • Low on-resistance of 0.15 Ohms.
  • Available in TO-220AB, D2Pak, and TO-262.

IRF640NPBF Applications

  • Suitable for power switching applications.
  • Ideal for industrial power supplies.
  • Used in DC-DC converters.
  • Applicable for motor control circuits.

IRF640NPBF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the continuous drain current for the IRF640NPBF at 25°C?

The continuous drain current is 18A at 25°C with a VGS of 10V.

What is the maximum power dissipation of the IRF640NPBF?

The maximum power dissipation is 150W at 25°C.

What is the operating temperature range for the IRF640NPBF?

The operating junction and storage temperature range is -55°C to +175°C.

What packages are available for the IRF640NPBF?

The IRF640NPBF is available in TO-220AB, D2Pak, and TO-262 packages.

What is the RoHS status of the IRF640NPBF?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IRF640NPBF?

The Moisture Sensitivity Level is 1 Unlimited.

IRF640NPBF Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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IRF640NPBF
IRF640NPBF
Vishay
The Vishay Dale IRF640NPBF is an N-channel Power MOSFET with a 200V drain-source breakdown voltage and a continuous drain current of 18A at 25°C. It features a low on-resistance of 0.15 Ohms.
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