Mfr Part #:

IRF640NPBF

Mfr Name: Vishay

The Vishay Dale IRF640NPBF is an N-channel Power MOSFET with a 200V drain-source breakdown voltage and a continuous drain current of 18A at 25°C. It features a low on-resistance of 0.15 Ohms.

✓ Total Stock: 90 pcs

$ Price Range: $2.27

IRF640NPBF Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Partservice ✓ Non-Authorised Inventory information	90 pcs On Request	90 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRF640NPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Vishay
Lead Spacing	1.27 mm
Lead Style	Through-Hole
Mounting Type	Through Hole
Power Dissipation	150W
Reverse Recovery Time	251ns

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IRF640NPBF Description

Short technical summary and product information.

The Vishay Dale IRF640NPBF is a Fifth Generation HEXFET Power MOSFET designed for efficient and reliable performance in various applications. It offers advanced processing technology for extremely low on-resistance per silicon area, combined with fast switching speeds and a ruggedized device design.

Key electrical specifications include a drain-source breakdown voltage (Vds) of 200V and a continuous drain current (Id) of 18A at 25°C, decreasing to 13A at 100°C. The on-resistance (RDS(on)) is a low 0.15 Ohms. The device can handle pulsed drain currents up to 72A and has a power dissipation of 150W at 25°C.

This MOSFET operates within a junction and storage temperature range of -55°C to +175°C. It is housed in a TO-220AB package, a common choice for commercial-industrial applications due to its low thermal resistance and cost-effectiveness. The mounting type is through-hole.

The IRF640NPBF also includes a body diode with specific ratings, such as a maximum forward voltage of 1.3V and a reverse recovery time of up to 251ns. It is designed for simple drive requirements and is fully avalanche rated.

IRF640NPBF Quick Information

Product Type: MOSFET

Series: Fifth Generation HEXFET

Canonical Name: IRF640NPBF N-channel Power MOSFET

Subcategory: N-channel

IRF640NPBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IRF640NPBF Estimated Pricing

Qty	Low	High
1+	$2.27	$2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF640NPBF Features

200V drain-source breakdown voltage.
18A continuous drain current at 25°C.
0.15 Ohm maximum on-resistance.
TO-220AB through-hole package.
Fifth Generation HEXFET technology.

IRF640NPBF Applications

Suitable for power switching applications.
Efficient for DC-DC converters.
Used in general purpose power supplies.
Ideal for motor control circuits.

IRF640NPBF FAQs

7 frequently asked questions generated from this part’s specifications.

What is the continuous drain current for the IRF640NPBF at 25°C?

The continuous drain current is 18A at 25°C with a VGS of 10V.

What is the maximum drain-source breakdown voltage of the IRF640NPBF?

The drain-source breakdown voltage is 200V.

What is the on-resistance of the IRF640NPBF?

The on-resistance is 0.15 Ohms.

What is the operating temperature range for the IRF640NPBF?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the IRF640NPBF supplied in?

The IRF640NPBF is supplied in a TO-220AB package.

What is the RoHS status of the IRF640NPBF?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IRF640NPBF?

The Moisture Sensitivity Level is 1 Unlimited.