SI4953DY-T1-GE3
Vishay
The Vishay Dale SI4953DY-T1-GE3 is a dual P-channel MOSFET with a 30V drain-source voltage and 3.7A continuous drain current. It features a low on-resistance of 53 mOhm at 4.9A and 10V.
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28 pcs
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28 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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The BO530WS-7-F is a single rectifier diode manufactured by Diodes Incorporated. This component is designed for general-purpose rectification applications.
Key electrical characteristics include a maximum reverse voltage of 60V and an average forward current rating of 1A. The maximum forward voltage drop at 1A is 1.1V, and the maximum reverse leakage current at 60V is 10µA. It also has a fast reverse recovery time of 50ns.
The operating temperature range for this diode is from -55°C to 150°C. It is supplied in a surface mount TO-269AA, 3-Lead, TO-269AA package. The standard package quantity is 3000 units.
Environmental compliance includes RoHS3 compliance, REACH unaffected status, and a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
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| 1+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 60V.
The average forward current rating is 1A.
The maximum forward voltage is 1.1V at 1A forward current.
The maximum reverse recovery time is 50ns.
It is available in a TO-269AA surface mount package.
The maximum reverse leakage current is 10µA at 60V reverse voltage.
The operating temperature range is -55°C to 150°C.
