| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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90,400 pcs
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90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Tape & Reel |
The Vishay Siliconix SiR404DP-T1-E3 is a high-performance N-Channel MOSFET. It features a maximum drain-source voltage of 20V and a continuous drain current of 60A at 25°C (Tc). The on-resistance is rated at a maximum of 1.6 mOhm at 20A and 10V.
This MOSFET is designed for surface mounting in the PowerPAK SO-8 package, making it suitable for space-constrained applications. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 104W (Tc).
Key electrical characteristics include a gate charge of 97nC (max) at 4.5V and an input capacitance of 8130pF (max) at 10V. The gate-source voltage has a maximum rating of ±12V.
This component is suitable for various power management applications where efficient switching and low on-resistance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the SiR404DP-T1-E3 is 20V.
The continuous drain current (Id) is 60A at 25°C.
The maximum on-resistance (Rds On) is 1.6 mOhm, measured at 20A and 10V.
The maximum gate charge (Qg) is 97nC.
The maximum input capacitance (Ciss) is 8130pF.
The operating temperature range is from -55°C to 150°C.
The SiR404DP-T1-E3 is supplied in a PowerPAK SO-8 package.