| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
63 pcs
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63 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BF859 is an NPN high-voltage transistor manufactured by NXP Semiconductors, housed in a TO-202 plastic package. This component is suitable for applications such as video output stages in television receivers.
Key electrical characteristics include a collector-base voltage and collector-emitter voltage of 300V, an emitter-base voltage of 5V, and a continuous collector current of 100mA. The transistor also features a peak collector current of 300mA and a peak base current of 100mA. Its transition frequency is 90MHz at 15mA collector current and 10V collector-emitter voltage.
Thermal performance is supported by a total power dissipation of up to 2W at 25°C ambient temperature and 6W at 75°C mounting base temperature. The junction temperature is rated up to 150°C, with storage and operating ambient temperatures also ranging from -65°C to 150°C. Thermal resistance from junction to ambient is 62.5 K/W, and from junction to mounting base is 12.5 K/W.
The BF859 is designed for through-hole mounting. An A-version with alternative emitter-base-collector pinning is available upon request.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the BF859 is 300V.
The maximum continuous collector current (IC) for the BF859 is 100mA.
The BF859 is available in a TO-202 plastic package.
The transition frequency (fT) of the BF859 is 90MHz under test conditions of 15mA collector current and 10V collector-emitter voltage.
The operating ambient temperature range for the BF859 is -65°C to 150°C.
