| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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58,000 pcs
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58000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSP56 is a PNP Epitaxial Silicon Transistor manufactured by Samsung Electronics. It is designed for various electronic applications requiring a reliable PNP transistor.
Key electrical characteristics include a maximum Collector-Emitter Voltage (VCEO) of -80V and a maximum Collector Current (IC) of -500mA. The device offers a DC Current Gain (hFE) of 50 at specified test conditions and a Current Gain Bandwidth Product (fT) of 105MHz. The Collector Power Dissipation (PC) is rated at 625mW.
The transistor is housed in a TO-92 package, suitable for through-hole mounting. The operating junction temperature ranges up to 150°C, with storage temperatures from -55°C to 150°C.
This component is a complement to the KSP05/06 series, indicating potential for use in complementary push-pull configurations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-80V
625mW
50
105MHz
TO-92
RoHS3 Compliant
1 Unlimited