| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40,000 pcs
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40000 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
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The ROHM Semiconductor STZ6.2N is a Zener Diode suitable for voltage regulation applications. It is constructed using silicon epitaxial planar technology and comes in a small SMD3 package, offering high reliability.
Key electrical characteristics include a Zener voltage ranging from 5.81V to 6.40V at a test current of 5mA. The device exhibits a maximum operating resistance of 60Ω at 5mA and a maximum rising operating resistance of 100Ω at 0.5mA. The maximum reverse current is 1.00μA at 3.0V.
With a maximum power dissipation of 200mW at 25°C, the STZ6.2N has a maximum junction temperature of 150°C and a storage temperature range of -55°C to +150°C. The component is surface-mountable and designed for general electronic equipment.
This Zener diode is part of ROHM's extensive range of discrete semiconductor products, offering dependable performance for various circuit designs.
The Zener voltage of the STZ6.2N is between 5.81V and 6.40V when the test current is 5mA.
The maximum power dissipation for the STZ6.2N is 200mW at 25°C.
The STZ6.2N is available in an SMD3 package.
The storage temperature range for the STZ6.2N is -55°C to +150°C.