| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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236,200 pcs
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236200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Renesas 2SB647 is a Silicon PNP Epitaxial Transistor suitable for low frequency power amplifier applications. It features a maximum collector current of 1A and a collector-emitter voltage of up to 80V.
The transistor is housed in a TO-92 Mod package, designed for through-hole mounting. Key electrical characteristics include a maximum power dissipation of 900mW at 25°C ambient temperature and a junction temperature up to 150°C.
This component serves as a complementary pair with the 2SD667/A. Its electrical specifications include a collector-emitter saturation voltage of -1V and a DC current transfer ratio (hFE) ranging from 60 to 320 under specific test conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SB647 transistor is 1A.
The collector-emitter voltage rating for the 2SB647 is 80V.
The maximum power dissipation for the 2SB647 transistor is 900mW.
The 2SB647 transistor is in a TO-92 Mod package.
The storage temperature range for the 2SB647 is -55 to +150°C.
