| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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57 pcs
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57 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD1264A from Panasonic is a silicon NPN bipolar junction transistor (BJT) suitable for low-frequency power amplification and TV vertical deflection output applications. It is complementary to the 2SB0940 and 2SB0940A.
Key electrical characteristics include a high collector-emitter voltage (VCEO) of up to 180V for the 2SD1264A variant, a continuous collector current (IC) of 2A, and a peak collector current (ICP) of 3A. The device offers a forward current transfer ratio (hFE1) ranging from 60 to 240 under specified conditions. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 1.0V at 500mA collector current and 50mA base current. The transition frequency (fT) is a minimum of 20MHz at 10V collector-emitter voltage and 0.5A collector current.
This transistor is housed in a TO-220F-A1 full-pack package, designed for easy mounting to a heat sink with a single screw. The package dimensions are detailed in the datasheet. The operating junction temperature is rated up to 150°C, with storage temperatures ranging from -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SD1264A is 180V.
The continuous collector current (IC) for the 2SD1264A is 2A.
The 2SD1264A uses the TO-220F-A1 package.
The forward current transfer ratio (hFE1) ranges from 60 to 240 when VCE is 10V and IC is 150mA.
The maximum collector-emitter saturation voltage (VCE(sat)) is 1.0V at an IC of 500mA and IB of 50mA.
