| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26 pcs
|
26 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Storage Temperature |
The Renesas RJP6065 is a silicon N-Channel IGBT designed for power applications. It features a high collector-emitter voltage rating of 630V and a maximum collector current of 40A.
This IGBT offers a low collector-to-emitter saturation voltage of 1.8V typically, measured at 40A collector current and 15V gate-emitter voltage at 25°C. The device has a gate-to-emitter voltage rating of ±30V.
Packaged in a TO-3PFM case, the RJP6065 is suitable for through-hole mounting. Its absolute maximum ratings include a collector dissipation of 50W, a maximum junction temperature of 150°C, and a storage temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.54 | $2.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating (Vces) for the RJP6065 is 630V.
The RJP6065 has a maximum collector current (Ic) of 40A.
The typical collector-emitter saturation voltage (VCE(sat)) for the RJP6065 is 1.8V.
The RJP6065 is available in a TO-3PFM package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
