| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,980 pcs
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1980 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The HIT 2SC1213 is a Silicon NPN Epitaxial Transistor suitable for low frequency amplifier applications. It offers a collector-to-emitter voltage (VCEO) of up to 50V and a continuous collector current (IC) of 500mA.
This transistor features a DC current transfer ratio (hFE) ranging from 60 to 320 at 10mA collector current and 3V VCE. The collector-to-emitter saturation voltage (VCE(sat)) is a maximum of 0.6V at 150mA IC and 15mA IB. The maximum power dissipation (PC) is 400mW at 25°C ambient temperature.
Packaged in a TO-92 (1) through-hole configuration, the 2SC1213 is designed for ease of mounting on printed circuit boards. Its complementary pair is the 2SA673 and 2SA673A.
Key electrical characteristics include a breakdown voltage V(BR)CEO of 35V for the 2SC1213 and 50V for the 2SC1213A. The storage temperature ranges from -55°C to +150°C, and the junction temperature is rated up to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-to-emitter voltage (VCEO) for the 2SC1213 is 35V, and for the 2SC1213A it is 50V.
The maximum continuous collector current (IC) for the 2SC1213 is 500mA.
The 2SC1213 transistor is supplied in a TO-92 package.
The typical DC current transfer ratio (hFE) for the 2SC1213 is between 60 and 320 when tested at VCE = 3V and IC = 10mA.
The maximum power dissipation (PC) for the 2SC1213 is 400mW at an ambient temperature of 25°C.