| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
32,891 pcs
|
32891 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
7,952 pcs
|
7952 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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| Manufacturer Name | |
| Junction Temperature | |
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| Storage Temperature |
The SS8050 from CJ is an NPN Epitaxial Silicon Transistor, commonly used as a 2W output amplifier in portable radios, particularly in Class B push-pull operation. It is complementary to the SS8550 transistor.
Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of 25V and a maximum continuous collector current (IC) of 1.5A. The DC current gain (hFE) ranges from 85 to 300 at IC = 100mA and VCE = 1V. Saturation voltages are also specified, with VCE(sat) at 0.5V and VBE(sat) at 1.2V under specific test conditions.
This transistor is housed in a TO-92 package, suitable for through-hole mounting. The junction temperature is rated up to 150°C, with a storage temperature range of -65°C to 150°C. Thermal resistance (junction-to-ambient) is 125°C/W on a specified FR-4 PCB.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current (IC) for the SS8050 is 1.5A.
The collector-emitter breakdown voltage (BVCEO) of the SS8050 is 25V.
The DC current gain (hFE) of the SS8050 is typically between 85 and 300 when measured at VCE = 1V and IC = 100mA.
The SS8050 is available in a TO-92 package.
The maximum operating junction temperature (TJ) for the SS8050 is 150°C.