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KTB631K

The KTB631K is an epitaxial planar PNP transistor from Sanyo Denki. It offers a high breakdown voltage of 120V and a current rating of 1A.

✓ Total Stock: 16,207 pcs

$ Price Range: $165.89

KTB631K Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Fe Components ✓ Non-Authorised Inventory information	16,207 pcs On Request	16207 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

KTB631K Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Sanyo Denki
Current Rating	1A
Junction Temperature	150°C
Mounting Type	Through Hole
Turn Off Time	100ns
Turn On Time	20µs

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KTB631K Description

Short technical summary and product information.

The KTB631K is an epitaxial planar PNP transistor manufactured by Sanyo Denki. It is designed for low frequency power amplifier and medium speed switching applications.

Key electrical characteristics include a high breakdown voltage of 120V for both Collector-Emitter (VCEO) and Collector-Base (VCBO), and a continuous collector current (IC) rating of 1A. It also features a pulsed collector current (ICP) of 2A. The transistor exhibits a low saturation voltage, with a typical Collector-Emitter Saturation Voltage (VCE(sat)) of -0.4V at -500mA collector current and -50mA base current. The DC Current Gain (hFE) ranges from 100 to 320 at -5V VCE and -50mA IC.

This transistor is housed in a TO-126 package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to 150°C and has a storage temperature range of -55°C to 150°C. The power dissipation is rated at 1.5W at 25°C ambient temperature and 8W at 25°C case temperature.

Applications include low frequency power amplification and medium speed switching circuits where its high breakdown voltage and current handling capabilities are beneficial.

KTB631K Quick Information

Product Type: PNP Transistor

Canonical Name: KTB631K Epitaxial Planar PNP Transistor

Subcategory: PNP

KTB631K Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

KTB631K Estimated Pricing

Qty	Low	High
1+	$165.89	$165.89

Estimated market price range - modelled values for guidance only, not live distributor offers.

KTB631K Features

High breakdown voltage of 120V.
Continuous collector current of 1A.
Low saturation voltage.
TO-126 package for through-hole mounting.
Suitable for power amp applications.

KTB631K Applications

Low frequency power amplification.
Medium speed switching circuits.
General purpose amplification.
Power control applications.

KTB631K FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage for the KTB631K?

The maximum collector-emitter voltage (VCEO) for the KTB631K is -120V.

What is the continuous collector current rating of the KTB631K?

The continuous collector current (IC) rating for the KTB631K is -1A.

What is the DC current gain (hFE) of the KTB631K?

The DC current gain (hFE) ranges from 100 to 320 when measured at VCE=-5V and IC=-50mA.

What package type is the KTB631K supplied in?

The KTB631K is supplied in a TO-126 package.

What are the main applications for the KTB631K transistor?

The KTB631K is designed for low frequency power amplifier and medium speed switching applications.