IRF100P219
Infineon
The Infineon IRF100P219 is an N-channel power MOSFET designed for industrial applications. It offers a 100V drain-source voltage and a low on-resistance of 1.7 mΩ.
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The BF306 is a silicon NPN transistor from STMicroelectronics, suitable for various electronic applications. It features a maximum collector-emitter voltage of 25V and a maximum collector current of 25mA. The device operates within a junction temperature range of -55°C to 175°C.
This transistor is packaged in a TO-72 case and is designed for through-hole mounting. Key electrical specifications include a maximum collector power dissipation of 0.175W and a collector-base breakdown voltage of 45V. The forward current transfer ratio (hFE) is typically 39, with a minimum of 38.
With a transition frequency of 5 MHz, the BF306 is suitable for signal amplification and switching applications. Its robust construction and operating temperature range make it a reliable component for general-purpose use in electronic circuits.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the BF306 is 25V.
The maximum collector current for the BF306 is 25mA.
The maximum operating junction temperature for the BF306 is 175°C.
The BF306 transistor is supplied in a TO-72 case and is designed for through-hole mounting.
The minimum forward current transfer ratio (hFE) for the BF306 is 38.
The transition frequency of the BF306 is 5 MHz.
