| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,667 pcs
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3667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
| Halogen Free | |
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The Infineon IRFP4468 is a StrongIRFET™ N-channel Power MOSFET with a maximum drain-source voltage of 100V. It is designed for high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching circuits.
Key electrical characteristics include a low on-state resistance (Rds(on)) of 2.6 mΩ at a gate-source voltage of 10V and a continuous drain current (Id) of 195A at 25°C. The device also features a typical gate charge (Qg) of 149 nC.
This MOSFET is qualified according to JEDEC standards for industrial applications and operates at temperatures up to 175°C. It is packaged in a PG-TO247-3 through-hole package. The component is RoHS3 compliant, lead-free, and halogen-free.
Applications include hard-switched and high-frequency circuits, synchronous rectification in switch-mode power supplies (SMPS), and uninterruptible power supplies (UPS).
The maximum drain-source voltage for the IRFP4468 is 100V.
The on-state resistance (Rds(on)) is 2.6 mΩ when the gate-source voltage is 10V and the drain current is 195A.
The continuous drain current (Id) is 195A at a gate-source voltage of 10V and a temperature of 25°C.
The typical gate charge (Qg) for the IRFP4468 is 149 nC.
The IRFP4468 can operate at temperatures up to 175°C.
The IRFP4468 is supplied in a PG-TO247-3 package.
Yes, the IRFP4468 is RoHS3 Compliant.