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IRF100P219 The Infineon IRF100P219 is an N-channel power MOSFET designed for industrial applications. It offers a 100V drain-source voltage and a low on-resistance of 1.7 mΩ.
Mfr Part #:

IRF100P219

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IRF100P219 is an N-channel power MOSFET designed for industrial applications. It offers a 100V drain-source voltage and a low on-resistance of 1.7 mΩ.
✓ Total Stock: 11,200 pcs

IRF100P219 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
10,000 pcs
On Request
10000 pcs On Request 1 On Request On Request 21+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,200 pcs
On Request
1200 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRF100P219 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Mounting Type
Operating Temperature
Package / Case
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IRF100P219 Description

Short technical summary and product information.

The Infineon IRF100P219 is a StrongIRFET™ N-channel power MOSFET with a drain-source voltage rating of 100V. It features a very low on-resistance of 1.7 mΩ and a continuous drain current of 203A at 25°C. This MOSFET is fully qualified according to JEDEC standards for industrial applications, ensuring high reliability.

 

Designed for reduced conduction losses and suitability for high switching frequencies, the IRF100P219 offers excellent gate charge x Rds(on) (FOM) and optimized Qrr. It operates at temperatures up to 175°C, providing increased reliability compared to 150°C rated parts. The component is supplied in a PG-TO247-3 package, suitable for through-hole mounting.

 

This MOSFET is Pb-free lead plating and Halogen-free, compliant with RoHS and IEC61249-2-21 standards. Its robust design makes it ideal for various power management applications where efficiency and reliability are critical.

IRF100P219 Quick Information

Product Type: MOSFET
Canonical Name: Infineon IRF100P219 N-Channel Power MOSFET
Subcategory: Power MOSFET

IRF100P219 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

IRF100P219 Features

  • 100V drain-source voltage rating.
  • Low on-resistance of 1.7 mΩ.
  • High continuous drain current of 203A.
  • 175°C maximum operating temperature.
  • PG-TO247-3 package for through-hole mounting.

IRF100P219 Applications

  • Ideal for industrial applications.
  • Suitable for high switching frequencies.
  • Reduced conduction loss designs.
  • Enhanced reliability power systems.

IRF100P219 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IRF100P219?

The maximum drain-source voltage is 100 V.

What is the typical on-resistance of the IRF100P219?

The typical on-resistance is 1.7 mΩ.

What is the continuous drain current for the IRF100P219?

The continuous drain current is 203 A under specific conditions (Vgs = 10 V, T_J = 25 °C).

What is the operating temperature range for this MOSFET?

The operating temperature is up to 175°C.

What package type is the IRF100P219 supplied in?

It is supplied in the PG-TO247-3 package.

Is the IRF100P219 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IRF100P219?

The Moisture Sensitivity Level is 1 Unlimited.

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