IRF100P219
Infineon
The Infineon IRF100P219 is an N-channel power MOSFET designed for industrial applications. It offers a 100V drain-source voltage and a low on-resistance of 1.7 mΩ.
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494 pcs
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494 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay IRFD9024 is a P-Channel Power MOSFET offered in a HVMDIP package. This device is designed with third generation Power MOSFET technology, providing a balance of fast switching, rugged design, and cost-effectiveness.
Key electrical specifications include a drain-source voltage (Vds) of -60V and a gate-source voltage (Vgs) of ±20V. The drain-source on-state resistance (Rds(on)) is 0.28 Ω at Vgs = -10V. It can handle a continuous drain current (Id) of -1.6A at 25°C and -1.1A at 100°C, with a pulsed drain current (Idm) of -13A.
Thermal characteristics include a maximum power dissipation (Pd) of 1.3W at 25°C and an operating junction temperature range of -55°C to +175°C. The device also offers features like dynamic dV/dt rating, repetitive avalanche rating, and suitability for automatic insertion.
This MOSFET is suitable for applications requiring efficient power switching and control. Its robust design and operating temperature range make it a reliable component for demanding environments.
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| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-60 V
2 V
-1.6 A
1.3 W
-55 to +175 °C
HVMDIP
RoHS3 Compliant
