Mfr Part #:

IRF100P218

Mfr Name: Infineon

The Infineon IRF100P218 is an N-channel MOSFET designed for high performance applications. It features a low on-resistance and high current handling capabilities.

✓ Total Stock: 1,530 pcs

IRF100P218 Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	1,530 pcs On Request	1530 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRF100P218 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	330 nC
Halogen Free	Halogen-free
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	PG-TO 247-3
Power Dissipation	556 W

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IRF100P218 Description

Short technical summary and product information.

The Infineon IRF100P218 is a robust N-channel MOSFET belonging to the StrongIRFET family. It is designed with very low RDS(on) and excellent gate charge x RDS(on) figure of merit (FOM), making it ideal for high switching frequency applications.

Key electrical specifications include a Drain-Source Voltage (VDS) of 100V, a typical on-resistance (RDS(on)) of 1.1 mΩ at 10V gate-source voltage, and a maximum continuous drain current (ID) of 209A at 25°C case temperature. The device also offers a high operating temperature of 175°C, contributing to increased reliability.

This MOSFET is housed in a PG-TO 247-3 package, suitable for through-hole mounting. Its design is optimized for reduced conduction losses and lower overshoot voltage, providing benefits such as increased reliability compared to 150°C rated parts. The component is also halogen-free according to IEC61249-2-21 standards.

IRF100P218 Quick Information

Product Type: MOSFET

Canonical Name: IRF100P218 N-channel MOSFET

Subcategory: Single

IRF100P218 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IRF100P218 Features

Very low RDS(on) for reduced losses.
Excellent gate charge x RDS(on) FOM.
High 175°C operating temperature.
Optimized for high switching frequency.
Halogen-free according to IEC61249-2-21.

IRF100P218 Applications

High-current DC-DC converters.
Motor drive and inverter stages.
Power supply switching circuits.
Battery protection and management.

IRF100P218 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the IRF100P218?

The maximum drain-source voltage (VDS) is 100V.

What is the package type of the IRF100P218?

The package is PG-TO 247-3, a through-hole package.

What is the maximum junction temperature?

The maximum junction temperature (Tj) is 175°C.

What is the typical on-resistance of the IRF100P218?

The typical on-resistance (RDS(on)) at VGS=10V is 1.1mΩ.

What is the continuous drain current rating?

The continuous drain current (ID) is 209A when package-limited at TC=25°C, and 483A when silicon-limited.

What is the gate charge of the IRF100P218?

The gate charge (QG) from 0V to 10V is 330nC.

What is the power dissipation rating?

The maximum power dissipation (Ptot) at TC=25°C is 556W.