| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15,224 pcs
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15224 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics BDV67B is a high-performance Darlington transistor designed for various electronic applications. It boasts a collector-emitter sustaining voltage (Vceo(sus)) of 100V and a maximum collector-emitter saturation voltage (Vce(sat)) of 2V when operating at 10A collector current with 40mA base current.
This device features monolithic construction, integrating a base-emitter shunt resistor for enhanced reliability and performance. Key electrical characteristics include a continuous collector current (Ic) of 16A and a peak collector current (Icm) of 20A. The transistor operates within a junction temperature range of -65°C to +150°C.
With a total power dissipation of 125W at 25°C case temperature, the BDV67B is suitable for power switching and amplification tasks. Its thermal resistance from junction to case is a low 1°C/W, facilitating efficient heat management. The transistor also exhibits a typical turn-on time of 1μs and an off-time of 3.5μs, making it responsive in switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter sustaining voltage (Vceo(sus)) for the BDV67B is a minimum of 100V.
The BDV67B has a continuous collector current of 16A and a peak collector current of 20A.
The collector-emitter saturation voltage (Vce(sat)) for the BDV67B is a maximum of 2V at Ic = 10A and Ib = 40mA.
The total power dissipation for the BDV67B is 125W at a case temperature of 25°C.
The BDV67B can be operated and stored within a temperature range of -65°C to +150°C.
The typical turn-on time (ton) for the BDV67B is 1μs.
The typical off-time (toff) for the BDV67B is 3.5μs.
