| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
474 pcs
|
474 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9 pcs
|
9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Turn Off Time | |
| Turn On Time |
The BD202 is a Silicon PNP Power Transistor manufactured by NXP Semiconductors. It features a Collector-Emitter Breakdown Voltage (VCEO) of -45V for the BD202 and -60V for the BD204, and a continuous Collector Current (IC) of -8A.
This transistor is designed for applications in hi-fi equipment, delivering an output of 15 to 15 W into a 4 Ω or 8Ω load. It has a maximum Collector Power Dissipation (PC) of 60W at 25℃ case temperature and a maximum Junction Temperature (TJ) of 150℃.
The BD202 is complementary to the BD201/203 types. Its thermal resistance from junction to case (Rth j-c) is 2.08 ℃/W, and from junction to ambient (Rth j-a) is 70 ℃/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-45V
-8A
60W
150℃
2.08℃/W
Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4 Ω or 8Ω load.
