BD202 The BD202 is a Silicon PNP Power Transistor from Inchange Semiconductor designed for hi-fi equipment. It offers a collector-emitter breakdown voltage of -45V (min) and a continuous collector current of -8A.
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BD202

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BD202 is a Silicon PNP Power Transistor from Inchange Semiconductor designed for hi-fi equipment. It offers a collector-emitter breakdown voltage of -45V (min) and a continuous collector current of -8A.
✓ Total Stock: 200 pcs
$ Price Range: $0.99

BD202 Available from 1 distributor

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✓ Non-Authorised
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200 pcs
200 pcs On Request 1 On Request On Request On Request On Request On Request

BD202 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BD202 Description

Short technical summary and product information.

The BD202 is a Silicon PNP Power Transistor manufactured by Inchange Semiconductor, designed for applications such as hi-fi equipment delivering 15 to 15 W into a 4 Ω or 8Ω load.

 

Key electrical characteristics include a minimum collector-emitter breakdown voltage (VCEO) of -45V for the BD202 variant and -60V for the BD204 variant. The continuous collector current (IC) is rated at -8A, with peak currents up to -25A. Power dissipation (PC) is 60W at a case temperature of 25℃, and the junction temperature (TJ) can reach up to 150℃.

 

Thermal characteristics include a junction-to-case thermal resistance (Rth j-c) of 2.08℃/W and a junction-to-ambient thermal resistance (Rth j-a) of 70℃/W. The transistor is complementary to types BD201 and BD203.

 

Absolute maximum ratings specify a collector-base voltage (VCBO) of -60V and an emitter-base voltage (VEBO) of -5V. The BD202 is typically packaged in a TO-220 case, suitable for through-hole mounting.

BD202 Quick Information

Product Type: PNP Power Transistor
Canonical Name: BD202 Silicon PNP Power Transistor
Subcategory: PNP

BD202 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD202 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD202 Features

  • PNP Silicon Power Transistor
  • Collector-Emitter Breakdown Voltage: -45V (min)
  • Continuous Collector Current: -8A
  • Power Dissipation: 60W @ 25℃
  • Complementary to BD201/203

BD202 Applications

  • Used in switching power supplies
  • Suitable for linear amplification
  • Ideal for motor control circuits
  • Applicable in high-voltage switching applications

BD202 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the minimum collector-emitter breakdown voltage for the BD202?

-45V

What is the maximum continuous collector current for the BD202?

-8A

What is the power dissipation of the BD202 at 25℃?

60W

What is the junction-to-case thermal resistance?

2.08℃/W

What is the RoHS status of the BD202?

RoHS3 Compliant

What is the Moisture Sensitivity Level (MSL) for the BD202?

1 Unlimited

BD202 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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BD202
BD202
NXP Semiconductors
The BD202 is a Silicon PNP Power Transistor from NXP Semiconductors. It is designed for use in hi-fi equipment.
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BD204
BD204
NXP Semiconductors
The BD204 is a PNP power transistor from NXP Semiconductors, designed for applications like hi-fi equipment and medium power switching. It features a -60V collector-emitter breakdown voltage.
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BD204
BD204
N-A
The BD204 is a PNP power transistor designed for applications like hi-fi equipment. It offers a -60V Collector-Emitter Breakdown Voltage and a continuous collector current of -8A.
View Part
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