2SC3679 The Sanken 2SC3679 is an NPN power transistor designed for switching regulator and general purpose applications. It offers a high collector-emitter breakdown voltage of 800V.
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2SC3679

Available from 2 distributors
Mfr Name: Sanken
Sanken
The Sanken 2SC3679 is an NPN power transistor designed for switching regulator and general purpose applications. It offers a high collector-emitter breakdown voltage of 800V.
✓ Total Stock: 1,907 pcs
$ Price Range: $0.99

2SC3679 Available from 2 distributors

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1,900 pcs
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7 pcs
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2SC3679 Specifications Quick View

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2SC3679 Description

Short technical summary and product information.

The 2SC3679 from Sanken is a silicon NPN power transistor engineered for demanding switching regulator and general purpose applications. It boasts a high collector-emitter breakdown voltage of 800V (minimum), ensuring robust performance in high-voltage scenarios. This transistor also features a high switching speed and reliability, making it suitable for various electronic designs.

 

Key electrical characteristics include a continuous collector current of 5A and a peak collector current of 10A. The DC current gain (hFE) is typically between 10 and 30 at 2A collector current and 4V VCE. Its current-gain-bandwidth product (fT) is 6MHz at -0.5A and 12V VCE. The device exhibits a typical collector-emitter saturation voltage (VCE(sat)) of 0.5V at 2A collector current and 0.4A base current, and a base-emitter saturation voltage (VBE(sat)) of 1.2V under the same conditions.

 

With a continuous collector current rating of 5A and a peak rating of 10A, the 2SC3679 is capable of handling significant current loads. Its power dissipation is rated at 100W at 25℃ case temperature. The operating junction temperature range is -55℃ to 150℃, with a storage temperature range also from -55℃ to 150℃.

 

Switching characteristics are also noteworthy, with a typical turn-on time of 1.0μs, storage time of 5.0μs, and fall time of 1.0μs under specified test conditions. The output capacitance (COB) is typically 75pF at 10V VCB and 1MHz test frequency. The 2SC3679 is designed for through-hole mounting.

2SC3679 Quick Information

Product Type: NPN Power Transistor
Canonical Name: 2SC3679 NPN Power Transistor
Subcategory: Bipolar (BJT) - Single, Pre-Biased

2SC3679 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SC3679 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC3679 Features

  • High 800V collector-emitter breakdown voltage.
  • Continuous collector current up to 5A.
  • Fast switching times around 1μs.
  • 100W power dissipation at 25℃.
  • Designed for switching regulators.

2SC3679 Applications

  • Used in high-voltage switching circuits
  • Suitable for power amplification applications
  • Ideal for high-voltage power supplies
  • Applicable in motor control modules

2SC3679 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter breakdown voltage for the 2SC3679?

The minimum collector-emitter breakdown voltage (V(BR)CEO) for the 2SC3679 is 800V.

What is the continuous collector current rating of the 2SC3679?

The continuous collector current (IC) for the 2SC3679 is rated at 5A.

What is the typical collector-emitter saturation voltage (VCE(sat))?

The typical collector-emitter saturation voltage (VCE(sat)) is 0.5V at IC=2A and IB=0.4A.

What is the current-gain-bandwidth product (fT) of the 2SC3679?

The current-gain-bandwidth product (fT) is 6MHz under the condition of IE=-0.5A and VCE=12V.

What are the typical switching times for the 2SC3679?

The typical switching times include a turn-on time of 1.0μs, storage time of 5.0μs, and fall time of 1.0μs.

What is the maximum power dissipation of the 2SC3679?

The maximum power dissipation (PC) is 100W at a case temperature of 25℃.

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