| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Automotive Grade | |
| Industrial Grade | |
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| Medical Grade | |
| Military Grade | |
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The BUW11A is an NPN Power Transistor manufactured by NXP Semiconductors, designed for high voltage and high-speed applications. It is housed in a TO-3PN package.
Key electrical specifications include a maximum collector-base voltage (VCBO) of 1000V and a maximum collector-emitter voltage (VCEO) of 450V. The continuous collector current (IC) is rated at 5A, with a peak collector current (ICM) of 10A. The total power dissipation (PT) is 100W at 25℃.
This transistor is suitable for applications such as converters, inverters, switching regulators, and motor control systems. Its thermal characteristics include a thermal resistance from junction to mounting base (Rth j-mb) of 1.25 K/W.
The BUW11A features a junction temperature (Tj) of 150℃ and a storage temperature range (Tstg) from -65℃ to 150℃. It also has a DC current gain (hFE) ranging from 10 to 35.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.13 | $2.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BUW11A is 450V.
The maximum continuous collector current (IC) for the BUW11A is 5A.
The maximum power dissipation (PT) for the BUW11A is 100W at 25℃.
The BUW11A transistor comes in a TO-3PN package.
The DC current gain (hFE) for the BUW11A ranges from 10 to 35.