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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD317 is a Silicon NPN Power Transistor manufactured by Inchange Semiconductor. It is designed for applications such as high power amplifiers and offers a high DC current gain and excellent safe operating area. The transistor comes in a TO-3 package.
Key electrical characteristics include a collector-emitter voltage of 100V and a continuous collector current of 16A. The peak collector current is rated at 20A, with a maximum base current of 5A. Power dissipation is rated at 200W at 25°C case temperature. The device operates within a junction temperature range of -65°C to 200°C.
Thermal characteristics include a low thermal resistance from junction to case of 0.875°C/W. The BD317 is the complementary type to the BD318.
This component is suitable for through-hole mounting. Its robust design and specifications make it a reliable choice for power amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BD317 is 100V.
The continuous collector current (IC) for the BD317 is 16A.
The DC current gain (hFE) of the BD317 is a minimum of 25 at IC=5A and VCE=4V.
The BD317 uses the TO-3 package.
The thermal resistance from junction to case (Rth j-c) for the BD317 is a maximum of 0.875°C/W.