| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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72 pcs
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72 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3019 is a military-qualified NPN silicon transistor manufactured by NXP Semiconductors. It is designed for high-reliability applications and features a TO-5 package.
Key electrical specifications include a maximum Collector-Emitter Voltage (VCEO) of 80V and a maximum Collector Current (IC) of 1A. The device offers a total power dissipation of 0.8W at ambient temperature and 5W at case temperature.
This transistor is suitable for military and other high-reliability applications. Its TO-5 package is through-hole mounted, making it suitable for various circuit designs. The device is RoHS compliant by design.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N3019 is 80V.
The maximum collector current (IC) for the 2N3019 is 1A.
The 2N3019 has a power dissipation of 0.8W at ambient temperature and 5W at case temperature.
The 2N3019 is available in a TO-5 package.
The 2N3019 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2N3019 is 1 Unlimited.
The REACH status for the 2N3019 is Unaffected.