| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3019 from Telefunken is a military-qualified, low-power NPN silicon transistor suitable for high-reliability applications. It features a TO-5 package with long leads, making it a through-hole component.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 80V and a Collector-Base Voltage (VCBO) of 140V. The continuous Collector Current (IC) is rated at 1A. Thermal performance is supported by a junction-to-case thermal resistance (RΘJC) of 30 °C/W and a junction-to-ambient thermal resistance (RΘJA) of 195 °C/W. Maximum power dissipation is 0.8W at ambient temperature and 5W at case temperature.
This device is RoHS compliant by design and is qualified per MIL-PRF-19500/391 with JAN, JANTX, JANTXV, and JANS levels available. It is also available in rad-hard levels. The transistor operates within a junction and storage temperature range of -65 to +200 °C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2N3019 is 80V.
The maximum continuous Collector Current (IC) for the 2N3019 is 1A.
The 2N3019 transistor comes in a TO-5 package.
The junction and storage temperature range for the 2N3019 is -65 to +200 °C.
Yes, the 2N3019 is RoHS compliant by design.