| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,175 pcs
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1175 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
495 pcs
|
495 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
314 pcs
|
314 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3019 is a military-qualified, low-power NPN silicon transistor manufactured by Motorola Semiconductor. It is designed for high-reliability applications and comes in a long-leaded TO-5 package.
Key electrical specifications include a Collector-Emitter Voltage (VCEO) of 80V, a Collector-Base Voltage (VCBO) of 140V, and a maximum Collector Current (IC) of 1A. The device has a maximum power dissipation of 0.8W at an ambient temperature of +25°C and 5W at a case temperature of +25°C.
Thermal characteristics include a junction-to-ambient thermal resistance (RΘJA) of 195 °C/W and a junction-to-case thermal resistance (RΘJC) of 30 °C/W. The operating and storage temperature range is from -65°C to +200°C.
This transistor is RoHS compliant by design and is suitable for military and other high-reliability applications requiring a lightweight, low-power component.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 80 V at TA = +25 °C.
The maximum collector current (IC) is 1 A.
The 2N3019 is available in a TO-5 through-hole package.
The maximum junction temperature is 200 °C.
Power dissipation is 0.8 W at 25 °C ambient and 5 W at 25 °C case temperature.
Junction-to-case thermal resistance is 30 °C/W and junction-to-ambient is 195 °C/W.