| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3019 is a low-power NPN silicon transistor from SEMELAB, qualified for high-reliability applications per MIL-PRF-19500/391. It is housed in a long-leaded TO-5 package.
Key electrical specifications include a maximum Collector-Emitter Voltage (VCEO) of 80V and a maximum Collector Current (IC) of 1A. The device offers a maximum power dissipation of 0.8W at an ambient temperature of +25°C, derating linearly. Thermal resistance is rated at 195 °C/W for junction-to-ambient and 30 °C/W for junction-to-case.
This transistor is suitable for military and other high-reliability applications. It is also available in alternative package styles such as TO-39, TO-46, TO-18, and UB packages, with specific part number variations noted.
The 2N3019 is RoHS compliant by design and operates within a junction and storage temperature range of -65°C to +200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2N3019 transistor is 80V.
The maximum Collector Current (IC) for the 2N3019 transistor is 1A.
The 2N3019 transistor is supplied in a TO-5 package.
The 2N3019 transistor has a junction and storage temperature range of -65°C to +200°C.
The 2N3019 transistor is RoHS3 Compliant.